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Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium ...
A gate dielectric is formed by atomic layer deposition of ... forming a layer of zirconium oxide on the layer of hafnium ... Method for forming a gate insulating ...
Dec 16, 2003· Method for forming Lshaped spacers with precise width control ... are formed by atomic layer deposition ... hafnium oxide, and zirconium ...
A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to achieve ... An insulating layer ... Atomic layer deposited zirconium ...
Methods of using atomic layer deposition to deposit a high dielectric constant material on ... zirconium oxide atomic layer ... Atomic layer deposition of hafnium ...
Methods according to some embodiments can be used to form siliconrich hafnium silicate and zirconium ... metal silicate films ... atomic layer deposition of hafnium ...
A dielectric film containing a nanolaminate with a hafnium oxide layer and a zirconium oxide ... layer of hafnium oxide by atomic layer deposition. ... Genus, Inc ...
... a zirconium and/or hafniumcontaining layer on a ... a substrate in a vapor deposition process. The zirconium, hafnium, ... "Atomic layer deposition" ...
The present invention generally is a method for forming a highk dielectric layer, comprising depositing a hafnium compound by atomic layer deposition .
A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to achieve ... An insulating layer ... Atomic layer deposited zirconium ...
The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium oxide (HfO2) doped with dysprosium (Dy) and a method of fabricating such a combination ...
Genus, Inc. Radicalassisted ... Apparatuses and methods for atomic layer deposition of hafniumcontaining highk ... Insulating film formation method which exhibits ...
Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium silicon ...
A dielectric layer containing an atomic layer deposited zirconium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric ...
Dec 24, 2008· SYSTEMS AND METHODS FOR FORMING ZIRCONIUM AND/OR HAFNIUM ... is an atomic layer deposition ... deposition process. The zirconium, hafnium.
Home > Atomic Layer Deposition Of Insulating Hafnium And Zirconium Genus. Atomic Layer Deposition Of Insulating Hafnium And Zirconium Genus
An embodiment for a method for forming an oxide film containing titanium and zirconium by atomic layer deposition ... Genus, Inc: Radical ... gate insulating layer ...
... layers provide an insulating layer in a variety of ... to deposit hafnium by atomic layer deposition. ... zirconium oxide atomic layer deposited ...
The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination ...
Atomic layer deposited barium strontium titanium oxide films ... both atomic layer deposited barium strontium titanium ... "Atomic Layer Deposition of Zirconium ...
FIG. 1 depicts all atomic layer deposition system for ... including an insulating layer having a hafnium ... Deposition of hafnium oxide and/or zirconium oxide and ...
Jan 27, 2009· Deposition methods for forming silicon oxide layers ... "Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis ... An insulating layer 16, ...
364 rows· Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. .
A gate dielectric is formed by atomic layer deposition employing a hafnium ... Method for forming a gate insulating ... "Atomic Layer Deposition of Zirconium ...
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